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Publication Detail
Photonic integrated circuit on InP for millimeter wave generation
  • Publication Type:
    Conference
  • Authors:
    Van Dijk F, Lamponi M, Chtioui M, Lelarge F, Kervella G, Rouvalis E, Renaud C, Fice M, Carpintero G
  • Publication date:
    01/01/2014
  • Published proceedings:
    Proceedings of SPIE - The International Society for Optical Engineering
  • Volume:
    8988
  • ISBN-13:
    9780819499011
  • Status:
    Published
  • Print ISSN:
    0277-786X
Abstract
Indium phosphide and associated epitaxially grown alloys is a material system of choice to make photonic integrated circuits for microwave to terahertz signal generation, processing and detection. Fabrication of laser emitters, high speed electro-optical modulators, passive waveguides and couplers, optical filters and high speed photodetectors is well mastered for discrete devices. But monolithic integration of them while maintaining good performances is a big challenge. We have demonstrated a fully integrated tunable heterodyne source designed for the generation and modulation of sub-Terahertz signals. This device is to be used for high data-rate wireless transmissions. DFB lasers, SOA amplifiers, passive waveguides, beam combiners, electro-optic modulators and high speed photodetectors have been integrated on the same InP-based platform. Millimeter wave generation at up to 120 GHz based on heterodyning the optical tones from two integrated lasers in an also integrated high bandwidth photodetector has been obtained. © 2014 SPIE.
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