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Publication Detail
1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers
  • Publication Type:
    Journal article
  • Publication Sub Type:
    Journal Article
  • Authors:
    Tang M, Chen S, Wu J, Jiang Q, Dorogan VG, Benamara M, Mazur YI, Salamo GJ, Seeds A, Liu H
  • Publication date:
    01/01/2014
  • Pagination:
    11528, 11535
  • Journal:
    Optics Express
  • Volume:
    22
  • Issue:
    10
  • Status:
    Published
Abstract
We compare InAlAs/GaAs and InGaAs/GaAs strained-layer superlattices (SLSs) as dislocation filter layers for 1.3-μm InAs/GaAs quantum-dot laser structures directly grown on Si substrates. InAlAs/GaAs SLSs are found to be more effective than InGaAs/GaAs SLSs in blocking the propagation of threading dislocations generated at the interface between the GaAs buffer layer and the Si substrate. Room-temperature lasing at ∼1.27 μm with a threshold current density of 194 A/cm 2 and output power of ∼77 mW has been demonstrated for broad-area lasers grown on Si substrates using InAlAs/GaAs dislocation filter layers. © 2014 Optical Society of America.
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